Abstract
By manipulating the magnetic domains of high-purity bulk iron single crystals (characterized by residual resistance ratios up to 5700) in small magnetic fields, resistivity changes up to a factor of 100 are measured at low temperature. Domain observation by Kerr microscopy shows that domain wall creation and annihilation is the origin of the resistivity changes. A qualitative model is suggested in which the walls act as channels for the electric current due to specific Lorentz trajectories around the walls. It is expected that this fundamental negative wall resistance effect contributes to magnetoresistance phenomena in any material and device containing domain walls.
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