Abstract
The temperature-dependent giant magnetoresistance effect is investigated in a magneticallymodulated two-dimensional electron gas, which can be realized by depositing two parallelferromagnets on the top and bottom of a heterostructure. The effective potential forelectrons arising for parallel magnetization allows the electrons to resonantly tunnelthrough the magnetic barriers, while this is excluded in the anti-parallel situation. Such adiscrepancy results in a giant magnetoresistance ratio (MRR), which can be up to1031%. The MRR shows a strong dependence on temperature, but our study indicates thatfor realistic parameters for a GaAs heterostructure the effect can be as high as104% at 4 K.
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