Abstract
It has been challenging to achieve combined strong magnetoelectric coupling and narrow ferromagnetic resonance (FMR) linewidth in multiferroic heterostructures. Electric field induced large effective field of 175 Oe and narrow FMR linewidth of 40 Oe were observed in FeCoSiB/Si/SiO2/PMN-PT heterostructures with substrate clamping effect minimized through removing the Si substrate. As a comparison, FeCoSiB/PMN-PT heterostructures with FeCoSiB film directly deposited on PMN-PT showed a comparable voltage induced effective magnetic field but a significantly larger FMR linewidth of 283 Oe. These multiferroic heterostructures exhibiting combined giant magnetoelectric coupling and narrow ferromagnetic resonance linewidth offer great opportunities for integrated voltage tunable RF magnetic devices.
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