Abstract
We have fabricated a novel type of lateral surface superlattice device comprising parallel, stressed ribs of In0.2Ga0.8As on a GaAs/Al0.3Ga0.7As heterostructure containing a high mobility two-dimensional electron gas (2DEG). Magnetotransport measurements were used to deduce the form and magnitude of the potential modulation. These experiments, supported by our calculations, indicate the importance of both piezoelectric coupling of stress to the electrons and the repulsive potential induced in the 2DEG by the removal of layers from the surface to define the superlattice.
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