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Abstract
This article deals with Si/Ge heterostucture manufacturing using covalent bonding, and its application to the layer transfer of a thin germanium film. At first, bow simulations of the heterostructure are discussed, in order to determine the temperature that should be used during bonding. Then, the covalent bonding process used to manufacture the heterostructure is described and characterized. At the end, a layer transfer process and observations of a thin germanium film are presented.
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