Abstract
In this paper we report experimental results on the generation of broadband terahertz (THz) radiation using photoconductive emitters on the base of low-temperature-grown (LT) InGaAs for excitation with 1060 nm wavelength. The material properties of the semiconductor layers were investigated and the emitter function optimised. As experimental arrangement we have used a THz time-domain-spectroscopy (TDS) system. The THz spectrum reaches up to 3-4 THz, the signal to noise ratio was more than one hundred.
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