Generation of low-energy abundant electron energy probability functions using a magnetized plasma source

Abstract

The generation of low-energy electrons is essential for the plasma source of the charge neutralizer system within the ion implanter process of semiconductors and displays, owing to their exceptional capability of being effectively transported along their ion beams. In this study, we propose a method to produce non-Maxwellian electron energy probability functions (eepfs) characterized by low-energy-abundant electrons, specifically below 5 eV, across an electron extraction system. In the electron transport region with an axial magnetic field under conditions of high discharge voltage and gas flow rate, we observed a significant increase in low-energy electrons in eepfs. The simple global model proposed to analyze these results demonstrated that the wall loss of electrons can be reduced by an elevated plasma potential, which is influenced by the ionization rate in the transport region. These results are consistent with the experimentally measured plasma potential and electron density. Additionally, the reduction in wall losses and increased ionization rate within the transport region resulted in the relaxation of the plasma potential gradient. This phenomenon effectively inhibited the cutting of low-energy electrons within the eepfs, thereby facilitating their consequential transport to the target. This study emphasizes the significance of increasing the ionization rate and minimizing the potential gradient for the dual purposes of generating low-energy electrons and directing them towards the target.