Abstract
A project of bright femtosecond pulse generation has been presented and investigated in silicon-on-insulator optical waveguides by utilizing the nonlinear process that includes the stimulated Raman scattering, non-degenerate two-photon absorption, and cross-phase modulation. It can be described that, when a continuous-wave and an ultrafast dark pulse are co-propagating in silicon waveguide, the continuous wave will be modulated inversely by the dark pulse during the propagation. As a consequence, the bright pulse with pulsewidth (full width at half-maximum) of only several tens of femtosecond can be achieved. Moreover, the properties of generated bright femtosecond pulse are strongly dependent on the input power, waveguide length, and dark pulsewidth.
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