Abstract
The copper wire vaporization method is applied to obtain porous copper film on a silicon surface. We determine the distribution of the surface clusters over the sizes and the density. The average size of the clusters under optimal conditions (at a distance of 2 mm from the discharge) is about 0.5 μm, and the deposition density is 3–5 clusters per squared μm.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
