Abstract
The characteristics of N-type accumulation-mode MOS (NMOS) varactors line periodically loaded with resonant tunneling diodes (RTDs) are used for soliton-like pulses generation and shaping. The problem of wide pulse breaking up into multiple pulses rather than a single is solved. Applying perturbative analysis, we show that the dynamics of the nonlinear transmission line (NLTL) is reduced to expanded Korteweg-de Vries (KdV) equation. Moreover, numerical integration of nonlinear differential and difference equations that result from the mathematical analysis of the line is discussed. As results, NLTL can simultaneously sharpen both leading and trailing of pulse edges and one could obtain a rising and sharpening step pulse.
Highlights
Up to now, electrical systems in which travelling waves could be observed were merely studied
The characteristics of N-type accumulation-mode MOS (NMOS) varactors line periodically loaded with resonant tunneling diodes (RTDs) are used for soliton-like pulses generation and shaping
We show that the dynamics of the nonlinear transmission line (NLTL) is reduced to expanded Korteweg-de Vries (KdV) equation
Summary
Electrical systems in which travelling waves could be observed were merely studied. NLTLs have broad applications in a variety of high-speed, wide bandwidth systems including mm-wave sources and frequency synthesizers Many of these applications involve techniques for forming and sharpening a short electrical pulse, such ultrawideband (UWB) systems are for e.g., attractive for radar and wireless communication applications. There are many reasons for this success; at first, it is apparent that planar waveguides are a “natural” solution in monolithic microwave integrated circuits (MMIC’s), being the direct evolution of classical interconnecting wires; microstrips as well as coplanar waveguides are completely compatible with the existing technological procedures for the metallization and passivation of monolithic integrated circuits In this context, recent progresses in III-V semiconductor technology and in silicon-based CMOS process technologies have led to the development of NLTLs, as the key component for high-speed electronics [3,4,5].
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