Abstract
Based on the microscopic mechanisms of (1) charge-excitation-induced negative effective U in s1 or d9 electronic configurations, and (2) exchange-correlation-induced negative effective U in d4 or d6 electronic configurations, we propose a general rule and materials design of negative effective U system in itinerant (ionic and metallic) system for the realization of high-Tc superconductors. We design a Tc-enhancing layer (or clusters) of charge-excitation-induced negative effective U connecting the superconducting layers for the realistic systems.
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