Abstract
We have studied the Ge diffusion in tensile-strained Si on relaxed SiGe. Two Ge concentrations have been used, 30 and 40%, in order to induce two different strain levels in the Si layer. Thermal budgets in-between 750 and 1000ºC for four hours have been tested. Higher thermal budgets lead as expected to a higher diffusion of Ge in sSi. The diffusion length is superior to 20 nm at 1000ºC, 4 hours. We have observed a slight increase of the diffusion coefficient of Ge in tensile strained silicon when the strain was increased.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
