Abstract
Velocity overshoot in GaAs is simulated using a time-dependent implementation of the GAVELS (Gallium Arsenide VELocity-Space) transport model. A solution technique is described which combines the steady-state carrier distributions with analytically derived relaxation parameters. The technique produces fast results and lends intuitive insight into the effect of the steady-state fine structure and relaxation parameters. Simulated responses to field steps in the 0–20 kV cm −1 range compare more favorably with Monte-Carlo results than simulations using fitted relaxation rates and Maxwellian steady-state distributions. The new results demonstrate the significance of the steady-state fine structure as well as a more sophisticated application of the GAVELS methodology.
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