Abstract
We have fabricated an encapsulated monolayer MoS2 device with metallic ohmic contacts through a pre-patterned hexagonal boron nitride (hBN) layer. In the bulk, we observe an electron mobility as high as 3000 cm2/Vs at a density of 7 × 1012 cm−2 at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of hBN, we are able to confine electrons in MoS2 and observe the Coulomb blockade effect. By tuning the middle gate voltage, we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.
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