Abstract
In this investigation, extensive simulations were performed for an AlGaN/GaN Dual-Gate MISHEMT configuration using ATLAS TCAD to optimize the device design for high power switching applications. We conducted a simulation study for the breakdown characteristics of a Dual-Gate AlGaN/GaN (DG)-MISHEMT with different gate lengths as explained in this paper. The optimized device with 0.25 µm gate length exhibits an breakdown voltage > 700 V and an cut-off frequency of 50 GHz when gate2 (G2) is attached to the source and bias is applied at gate1 (G1). We studied the impact on a breakdown characteristics and the frequency performance of different dimensions such as distance between the two gates (LGG), gate1-to-source distance (LG1S) and gate1-to-drain distance (LG1D). The optimized device design was further used to study the scattering-parameters for different gate combinations. Further improvement in breakdown voltage and Johnson’s figure of merit (fT × VBR) is achieved for the DG-MISHEMT with HfO2–Al2O3 as gate insulator.
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