Abstract
Ex situ deposited SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor devices, with a minimum of interface state density of 3.5 × 1011 eV-1 cm-2 have been obtained by electron cyclotron resonance plasma method at a low substrate temperature (200 °C), after a rapid thermal annealing treatment. The effects of annealing temperature on interfacial and bulk electrical properties have been analysed using the C - V high-low frequency method and I - V measurements. The results show that, up to 600 °C, the annealing procedure gradually improves the interface properties of the devices. The frequency dispersion, the hysteresis and the interface trap density diminish, while the resistivity and the electrical breakdown field of the insulator film increase up to values of 8 × 1015 cm and 4 MV cm-1, respectively. We explain this behaviour in terms of the thermal relaxation and the reconstruction of the SiNx:H lattice and its interface with the In0.53Ga0.47As. At higher annealing temperatures, a sharp degradation of the structure occurs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
