Gate Engineering to Improve Effective Resistance of 28-nm High-<inline-formula> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula> Metal Gate CMOS Devices

Abstract

In this paper, we report the development of a high- $k$ /metal gate stacking process to reduce the effective gate resistance, and circuit level validation results in 28-nm gate first integrated high- $k$ /metal gate CMOS devices. To achieve this, millisecond annealing was adopted and the silicon (Si) gate and TiN gate electrode thicknesses were controlled. The recrystallized poly-Si gate by millisecond annealing improved the performance of the ring oscillator (RO) by 15% and the minimum operating voltage ( $V_{\min }$ ) of the high-frequency test pattern (HFTP) by 34 mV. The poly-Si gate improved the uniformity of the boron concentration and suppressed localized low doping area at the bottom of the gate. When the Si gate thickness was reduced by 10 A with respect to the reference (POR) value, the performance of the RO improved by 5% and $V_{\min }$ of HFTP improved by 20 mV due to the shorter boron diffusion distance. A 10- A thicker TiN gate electrode improved $V_{\min }$ of HFTP by 30 mV, since the thicker TiN reduced the TiN/Si gate interface resistance.