Abstract
We propose an approach to improve the performance of graphene-based gas sensors by the integration of defective graphene with pristine graphene. The defect density of defective graphene is controlled by the fluence of Si+ implantation, and an H2 etching process is utilized to tune defect size. As defects are able to adsorb target gas efficiently, the response of graphene-based sensors was improved remarkably with the controllable defect density. The response sensitivity of a defective-graphene-based sensor to concentrations of NO2 at 100 ppm can be as high as 248%, 13 times higher than that of a sensor built using pristine graphene. In addition, defective-graphene-based sensors exhibit high response and recovery rates at room temperature, which is comparable to those of pristine graphene-based sensors and faster than conventional defect-decorated graphene sensors. Most importantly, defective-graphene-based gas sensors exhibit excellent reproducibility, stability, and selectivity. Our study suggests a simple and effective strategy for the mass production of high-performance graphene-based gas sensors for NO2 gas detection.
Highlights
As a well-known two-dimensional material, graphene (Gr) has attracted intense research interest since it was successfully fabricated in 2004.1 Due to its exceptional electrical,2 mechanical,3 and chemical4 properties, graphene has been considered a potential material for the building of a variety of high-performance devices, such as electronic devices,5,6 optoelectronic devices,7,8 and chemical detectors.9–11 In 2007, Geim et al proposed that graphene-based gas sensors might possess ultimate sensitivity and might even detect individual gas molecules.12 Subsequently, great effort has been made to develop graphene-based gas sensors
In contrast to metal oxide semiconductor gas sensors, which require heating to enhance the response,16 graphene gas sensors exhibit a high performance at room temperature
A polymethyl methacrylate (PMMA) assisted wet transfer method was used to transfer the defective graphene film to pristine graphene grown on a Ge substrate
Summary
As a well-known two-dimensional material, graphene (Gr) has attracted intense research interest since it was successfully fabricated in 2004.1 Due to its exceptional electrical, mechanical, and chemical properties, graphene has been considered a potential material for the building of a variety of high-performance devices, such as electronic devices, optoelectronic devices, and chemical detectors. In 2007, Geim et al proposed that graphene-based gas sensors might possess ultimate sensitivity and might even detect individual gas molecules. Subsequently, great effort has been made to develop graphene-based gas sensors. In 2007, Geim et al proposed that graphene-based gas sensors might possess ultimate sensitivity and might even detect individual gas molecules.. Great effort has been made to develop graphene-based gas sensors. Compared with conventional functional materials, graphene possesses unique advantages in terms of gas sensing. In contrast to metal oxide semiconductor gas sensors, which require heating to enhance the response, graphene gas sensors exhibit a high performance at room temperature.. In contrast to metal oxide semiconductor gas sensors, which require heating to enhance the response, graphene gas sensors exhibit a high performance at room temperature.17 Benefiting from these outstanding features, various graphene-based gas sensors have been developed to detect O2, CO, CO2, H2O, NH3, H2S, and NO2.18–23 Graphene’s high specific surface area (∼2600 m2/g) provides an excellent adsorption platform for target molecules, and its high carrier mobility reduces thermal noise, extending the detection limit. In addition, in contrast to metal oxide semiconductor gas sensors, which require heating to enhance the response, graphene gas sensors exhibit a high performance at room temperature. Benefiting from these outstanding features, various graphene-based gas sensors have been developed to detect O2, CO, CO2, H2O, NH3, H2S, and NO2.18–23
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