Abstract

Nanocrystalline WO3 films were produced by advanced reactive gas deposition onto alumina substrates. The as‐deposited films had a tetragonal crystal structure and a mean grain size of around 6 nm, as found by X‐ray diffraction and electron microscopy. Sintering at a temperature τs > 770 K yielded monoclinic films. We investigated the gas‐sensing properties of films sintered up to 870 K. After an initial “activation” at τs= 750 K, the nanocrystalline WO3 films showed excellent gas‐sensing properties, even at room temperature, on exposure to low concentrations of H2S in air. As little as 10 ppm of H2S made the conductance increase by a factor of about 103 within 10 min. The initial properties could be restored by heating the films to 530 K for 1 min.

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