Abstract
The ever increasing interest in the use of sapphire as a substrate for the heteroepitaxial growth of various materials has prompted a re‐examination of gas‐phase etching as an effective means for improving the surface of . Based on a previous investigation (1) in which several fluorinated hydrocarbons were found effective as etchants for , chlorotrifluoromethane was selected for further study for several orientations. It was found to be a good etch‐polish agent for , (0001), and ∼ .
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