GaN‐on‐Si wafers for HEMTs with high power‐driving capability

Abstract

AbstractBy means of our patented strain engineering technology, we achieved high crystal quality and near zero wafer bow on our 150 mm GaN‐on‐Si wafers. To show the feasibility of our wafers for HEMTs with large gate periphery, we investigated the buffer breakdown(VBR) yield on device test structures with different periphery. To reduce the processing complexity, we used comb‐shaped structures with only source and drain contacts and N+ implant isolation in between the contacts. The VBR was defined at buffer leakage of 1 µA/mm. For a typical source‐drain distance of 14 µm, the VBR yield specification is 600 V. Then we demonstrated over 80% VBR yield for 100 mm device test structures on our 150 mm GaN‐on‐Si wafers. This high yield for large periphery test structures shows that our 150 mm GaN‐on‐Si wafers are very suitable for fabricating large HEMT devices. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)