Abstract
Magnetic field pulsers (MFP) generate a pulsed magnetic field by driving current through an inductor. These pulsers have numerous applications based on the output magnetic flux density and switching time. This investigation will explore the application of gallium nitride-based (GaN) transistor in a MFP design. Based on the advantages of GaN transistors, the investigation looks towards creating a pulser capable of producing magnetic flux density of 500 Gauss with a rise/fall time of less than 500 nanoseconds. This investigation will improve upon findings from prior pulsers designed for magneto-optic switching applications. Simulation results have shown that for a given maximum current level, the GaN transistor pulser displays steeper rise and fall time when compared to a pulser employing a Si transistor. This result further highlights the potential of GaN transistor as the switching device where rapid field switching is preferable.
Highlights
Magnetic field pulser (MFP) can be found across different fields and applications
The authors present the result of three MFP designs
The authors are exploring alternative methods to obtain gallium nitride (GaN) transistors to operate with small amplitude signals
Summary
Magnetic field pulser (MFP) can be found across different fields and applications. For example, in communication systems, the pulser is central to an all-optical switching platform employing the theory of Faraday rotation. In the medical field, pulsers are used in transcranial magnetic stimulation (TMS) to provide safer, noninvasive application of magnetic pulses for treatment of certain mental disorders. Another application area is portable magnetic resonance where pulsed fields are needed to obtain the condition of resonance and different material properties can be identified.4A high-speed, high-current switching device is integral to the pulsed field switching mechanism. Pulsers are used in transcranial magnetic stimulation (TMS) to provide safer, noninvasive application of magnetic pulses for treatment of certain mental disorders.. Compared to silicon-based transistors, GaN transistors are lauded to have even higher drain current and extremely fast switching speed due to its different electrical composition, leading to a larger bandgap, faster electron mobility, and good thermal conductivity.. Compared to silicon-based transistors, GaN transistors are lauded to have even higher drain current and extremely fast switching speed due to its different electrical composition, leading to a larger bandgap, faster electron mobility, and good thermal conductivity.5 These are all desirable properties for a switch in the MFP design Compared to silicon-based transistors, GaN transistors are lauded to have even higher drain current and extremely fast switching speed due to its different electrical composition, leading to a larger bandgap, faster electron mobility, and good thermal conductivity. These are all desirable properties for a switch in the MFP design
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