Abstract
This paper reports gamma and electron beam irradiation effects on the resistance of polycrystalline silicon beams in MEMS. Displacement damage, injection annealing, and thermal spike are identified as causes of the gamma and electron beam irradiation effect on polycrystalline silicon. Radiation effect on grain neutral regions and grain boundary of polycrystalline silicon is also discussed. Co60 irradiation test and electron beam irradiation were performed to identify the radiation effects on polycrystalline silicon beams. Resistances were measured by a Keithley Semiconductor Characterization with hardware modules of 4200-scs to reveal the gamma and electron irradiation effect on resistance of the microbridges. The reason for the change of the resistance was analyzed by the theory of radiation effects in solids, and the gamma and electron beam irradiation effects which induce this change were discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
