Abstract
AbstractWe report on the fabrication of GaInN‐based solar cells using GaInN/GaInN superlattices as active layers and also as underlying layers beneath the active layers. We obtained pit‐free surfaces, even with a high InN molar fraction, using the superlattices. As a result, the maximum external and internal quantum efficiencies reached 60%, and 88%, respectively. The open‐circuit voltage of the soalr cells was 1.77 V, the short‐circuit current density was 3.08 mA/cm2, and the fill factor was 70.3%. A conversion efficiency of 2.46% was achieved at room temperature under simulared 1.5 sun × AM1.5G illumination using a solar simulator. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
