Abstract
In magnetron sputtered oxide thin films, both the structure and physical properties are affected by bombardment-induced defects and their annihilation. Ga-doped zinc oxide (GZO) films with low Ga content (~1.7 at.%) were magnetron sputtered at various discharge voltages (70–220 V) and the growth temperatures (130 °C and 380 °C). The microstructure was characterized by X-ray Diffractometry, Raman Spectroscopy, and Transmission Electron Microscopy. Meanwhile, the electrical and optical properties were measured by Hall-effect measurement and Spectroscopic Ellipsometry, respectively. We found that reducing the discharge voltage led to higher structural quality and better electrical properties, independent of the growth temperature. The benefit, from using a high temperature (i.e., 380 °C), of the structural improvement, can only be achieved when the discharge voltage has been decreased to ultralow (i.e., 70 V). Our results suggest that for high quality GZO films deposition, controlling the defect generation should be preferable to simply increasing the growth temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
