Abstract
We have investigated the characteristics of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) with Al<sub>0.7</sub>Ga<sub>0.3</sub>As cladding layers. The active region of QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In<sub>0.15</sub>Ga<sub>0.85</sub>As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10 ~ 50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 155 and 95 A/cm<sup>2</sup> for a 2000 μm-long as-cleaved and a 1500 μm-long HR coated LDs, respectively. The lasing wavelength was 1.31 μm from the ground state transition, under a pulsed operation condition (0.1%) at room temperature. The QDLD showed simultaneous lasing at 1.31 μm and 1.23 μm from the ground state (GS) and the excited state (ES), respectively. The lasing wavelength switching from the GS to the ES depends on the cavity length, the injection current and operating temperature.
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