Abstract
Atomic layer epitaxy (ALE) of AlAs is realized by supplying partially decomposed trimethylaluminium to a substrate. GaAs/AlGaAs quantum wells and GaAs/AlAs resonant tunneling structures are prepared by ALE. Photoluminescence spectra show the narrowest spectral width ever obtained by ALE, showing the small thickness variation. Negative resistance is observed in a resonant tunneling diode.
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