Abstract
High-performance digital integrated circuits have been fabricated with low-temperature buffer GaAs MESFET technology. The materials structure eliminates side-gating and light sensitivity, and improves FET performance. Individual transistors with a 0.2-mm gate length have a transconductance g m of 600 mS/mm and an extrapolated cutoff frequency f T of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz
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