Abstract
GaAs films were grown with molecular beam epitaxy (MBE) method on Si substrates defected from plane (001) at 6° towards [110]. The processes of epitaxial layers nucleation and growth were controlled with the RHEED method. Investigations of the crystallographic properties of the grown structures were carried out by the methods of X-ray diffractometry and transmission electron microscopy (TEM). It is shown that the cyclic annealing and the LT-GaAs layers reduce the density of threading dislocations. The orientation GaAs film and the introduction of dislocation filters have little effect on the crystallographic properties of flms of GaAs/Si (001). It was found that in the LT-GaAs/Si layer the arsenic clusters are formed, as it occurs in the LT-GaAs/GaAs system without dislocation.
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