Abstract
The authors report on the design and performance of a 2-24-GHz distributed matrix amplifier and a 1-20-GHz two-stage Darlington coupled amplifier based on an advanced HBT (heterojunction bipolar transistor) MBE (molecular beam epitaxy) profile which increased the bandwidth response of the distributed and Darlington amplifiers by providing lower base-emitter and collector-base capacitances. The matrix amplifiers have 9.5-dB nominal gain and a 3-dB bandwidth to 24 G-Hz. It is the highest bandwidth reported for an HBT distributed amplifier. The input and output VSWRs (voltage standing wave ratios) are less than 1.5:1 and 2.0:1, respectively. The total power consumed is less than 60 mW. The chip size measures 2.5*2.5 mm. The two-stage Darlington amplifier has 7-dB gain and 3-dB bandwidth to 20 GHz. The input and output VSWRs are less than 1.5:1 and 2.3:1, respectively. This amplifier consumes 380 mW of power and has a chip size of 1.66*1.05 mm. >
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