Abstract
The development of optical transmission calls for sensitive and fast optoelectic transducers. With the advent of optical local area networks, hybrid transducers may no longer be appropriate, and monolithic emitters and receivers will be preferred. In this paper, we report on the first monolithic photoreceiver implemented with GaAs-GaAIAs bipolar devices. One phototransistor and two transistors are integrated, together with four resistors on a 0.5x0.5-mm/sup 2/ GaAs chip. The transimpedance receiver has a bandwidth of 80 MHz. SignaI and noise power measurements indicate that for a digital signal at 140 Mbit/s, the minimum detectable power is 1 µW (-30 dBm).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Microwave Theory and Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
