Abstract
GaAs-based wavelength extending metamorphic In0.83Ga0.17As photodetector structures with cut-off wavelength around 2.5μm and lattice mismatch up to 5.9% were grown by gas source molecular beam epitaxy. In this structure, continuously composition graded InxAl1−xAs was used as buffer layer. Compared to the InP-based photodetector with similar structure, the GaAs-based In0.83Ga0.17As photodetector structure shows almost the same degree of relaxation and a little larger residual strain, but lower lattice quality and poorer surface morphology, as well as relatively weaker photoluminescence intensity probably due to more non-radiative recombination centers formed in the In0.83Ga0.17As epilayer. For the photodetectors with 200μm mesa diameter, the typical dark currents (VR=10mV) are 819nA and 159nA at 300K for GaAs-based and InP-based In0.83Ga0.17As PDs, respectively, which leaves room for optimization of the structure.
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