Abstract
Strong coupling effects and polariton lasing are observed at 155 K with an edge-emitting GaAs-based microcavity diode with a single Al0.31Ga0.69As/Al0.41Ga0.59As quantum well as the emitter. The threshold for polariton lasing is observed at 90 A/cm2, accompanied by a reduction of the emission linewidth to 0.85 meV and a blueshift of the emission wavelength by 0.89 meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.
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