Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD

Abstract

Si-doped gallium oxide (Ga2O3) thin films were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) and fabricated into metal oxide semiconductor field effect transistors (MOSFETs). The Ga2O3 MOSFETs exhibited effective gate modulation of the drain current with a complete channel pinch-off for VG < −25 V, and the three-terminal off-state breakdown voltage was 390 V. The device shows a very low gate leakage current (∼50 pA mm−1), which led to a high on/off ratio of ∼108. These transistor characteristics were stable from room temperature to 250 °C.