Abstract
Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.
Highlights
According to the latest Intergovernmental Panel on Climate Change (IPCC) report released in August 2021 [1], climate change is widespread, rapid, and intensifying and some trends are regarded as irreversible
The metal-organic chemical vapor deposition (MOCVD) technique uses Ga-based organic material as metal precursors, such as trimethylgallium (TMGa) and triethylgallium (TEGa), which usually leads to C-contamination of the as-grown film
The Ga2 O3 power diode and transistor progress has been impressive, with devices approaching the frontier of the field
Summary
According to the latest Intergovernmental Panel on Climate Change (IPCC) report released in August 2021 [1], climate change is widespread, rapid, and intensifying and some trends are regarded as irreversible. Devices made with a semiconductor having a bandgap larger than silicon can be made with less material and have lower cooling requirements, saving a lot of space and weight in applications such as electrical transport. This integration obviously impacts the amount of power required and, saves energy and its associated emissions. There are several reasons for this dominance, to start with, Si-based devices still have substantial potential Their electrical and thermal performance is outstanding, their reliability is proven as can be seen from their years in application, as well as their low cost.
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