Abstract
The Ga 1− x Mn x Sb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga 1− x Mn x Sb samples showed that the Mn ions were successfully implanted into GaSb substrate. Clear double-crystal X-ray diffraction patterns of the Ga 1− x Mn x Sb samples indicate that the Ga 1− x Mn x Sb epilayers have the zinc-blende structure without detectable second phase. Magnetic hysteresis-loop of the Ga 1− x Mn x Sb epilayers were obtained at room temperature (293 K) with alternating gradient magnetometry.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
