Abstract
In this study, near-field Raman spectroscopy with high special resolution has been developed. This near-field Raman spectroscopy system consists of scanning near-field optical microscopy (SNOM) and polarized micro-Raman spectroscopy with oblique backscattering configuration. By using this system, near-field Raman spectrum of Si was evaluated. However, it was very difficult to detect Raman signal because near-field Raman scattering signal was very weak. To improve the signal, tip-enhanced system was added to developed system. Au coating apertureless SNOM probe has been developed by FIB machining. The curvature radius of this probe tip is less than 50nm. Polarized oblique incident light was irradiated to the probe tip and Raman scattering light was detected. As a result, enhancement of Raman scattering intensity was observed in the transition region from non-contact to contact of probe tip. Therefore, near-field Raman Spectrum of Si was able to be evaluated by near-field Raman spectroscopy with oblique backscattering configuration.
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