Abstract
Homogeneous thin films of the composition Hg 1− x Cd x Te were prepared by vacuum evaporation onto glass substrates using indium contacts. On this material, several measurements were undertaken comprising the temperature dependence of AC electrical conductivity, the temperature and frequency dependences of dielectric constant, photoconductivity and current-voltage characteristics. The results obtained were promising and showed good agreement between values of ΔE determined from current-voltage relationships and those previously determined from the temperature dependence of conductivity data. The mobility of charge carriers was determined to be 1.97 × 10 −7 cm 2V −1s −1, associated with a donor concentration of 4.5 × 10 18 cm −3 and a high-temperature activation energy of 0.078eV; these are indicative of a localized state conduction (hopping) mechanism. The material prepared shows a good response to light exposure which enables it to be used for light detectors or for the production of photosensors in photoelectric devices.
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