Abstract
Allowing for the simultaneous determination of the photocarriers drift mobilities and their small-signal recombination lifetime, the Moving photocarrier Grating Technique (MGT) is a useful characterization tool for photoconductive semiconductors. This technique is based on measuring the steady-state direct current induced by an interference pattern (IP) moving at a constant velocity between two coplanar ohmic contacts deposited on the semiconductor. The main drawback of the technique is the low level of the signal to be measured, which can be masked by noise. The Oscillating Photocarrier Grating technique (OPG), where the IP oscillates at a constant speed, has been proposed as an alternating current version of MGT, providing a higher signal-to-noise ratio. The IP oscillation is produced by the phase modulation of one of the interfering beams. Using the multiple trapping model we deduce the expression of the current density generated by OPG in a photoconductor. We observed theoretically and experimentally that OPG is not equivalent to MGT for the previously used amplitude of oscillation, especially when the IP moves at high speeds. However, we show that the desired equivalence between both techniques could be recovered by increasing the amplitude of oscillation. A phase modulator capable of achieving such amplitudes is required for the correct implementation of OPG.
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