Abstract
The lattice-matching conditions in extremely heavily C-doped GaAs (GaAs:C) layers were systematically investigated by using X-ray diffraction measurements from the (004) and (115) planes. The GaAs:C was grown by gas-source molecular beam epitaxy using carbontetrabromide ( CBr4) and was fully elastically strained up to a carrier concentration of 5×1020 cm-3. Even when the GaAs:C was annealed at 550° C, pseudomorphic lattice matching was maintained in spite of the decrease in the carrier concentration and the perpendicular lattice mismatch at the interface. Application of this GaAs:C to the base of InGaP/GaAs HBTs resulted in a current gain as high as 40 at a doping level of 1 ×1020 cm-3.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
