Abstract
The elastic and piezoelectric fields induced by misfit strain in semiconductor heterostructures are crucial for the design of semiconductor devices. This work formulates analytically the fully-coupled piezoelectric field in the heterostructure with a general anisotropic inhomogeneity. The application of the ellipsoidal inhomogeneity is numerically solved by implementations of the generalized Green's function and its derivative as well as their surface integrals. Elaborations will be made on the similarities and differences for the usage of the inclusion and inhomogeneity in the fully-coupled analysis, along with some discussions about the shape and size effects in the end.
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