Abstract
Selenium and sulfur derivatives of lead(ii) acylchalcogourato complexes have been used to deposit PbSxSe1-x thin films by AACVD. By variation of the mole ratio of sulfur and selenium precursors in the aerosol feed solution the full range of compositions of PbSxSe1-x was obtained, i.e. 0 ≥ x ≥ 1. The films showed no contaminant phases demonstrating the potential for acylchalcogourato metal complexes as precursors for metal chalcogenide thin films. The crystal structure for bis[N,N-diethyl-N'-2-naphthoylthioureato]lead(ii) was solved and displayed the expected decreases in Pb-E bond lengths from the previously reported selenium variant.
Highlights
Lead chalcogenide nanomaterials have potential within photovoltaic devices due to their advantageous bulk bandgaps in the infra-red region (PbS = 0.41 eV, PbSe = 0.28 eV and PbTe = 0.31eV) and the ability to tune the band gap by quantum confinement
In this work we present a route to PbSxSe1−x thin films, where 0 ≥ x ≥ 1, using acylchalcogourea lead(II) complexes as precursors via aerosol assisted chemical vapour deposition (AACVD)
Single source precursors have been used as precursors for thin films by AACVD, which is a well-established route to synthesize a wide range of metal chalcogenides, CdE, PbE, NiE, SnS, ZnE etc. and has been reviewed previously by O’Brien et al.[1,2,3]
Summary
Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(II) complexes as precursors for AACVD† Selenium and sulfur derivatives of lead(II) acylchalcogourato complexes have been used to deposit PbSxSe1−x thin films by AACVD. By variation of the mole ratio of sulfur and selenium precursors in the aerosol feed solution the full range of compositions of PbSxSe1−x was obtained, i.e. 0 ≥ x ≥ 1.
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