Abstract
Abstract Hafnium oxide is an interesting material for a broad range of applications. Infrared spectroscopy was used to study the impact of aqueous environment and mechanism of formation of 5 nm HfO 2 films after nitric acid oxidation (NAOS) of n-doped Si (1 0 0) substrates. Samples were annealed in N 2 atmosphere at different temperatures 200–400 °C for 10 min. For NAOS passivation 100% vapor of HNO 3 (set A) and 98% aqueous solution (set B) was used. FTIR measurements reveal silicon oxide layer formation and formation of HfSiO x layer. There are differences in HfSiO x layer formation between samples of set A and B caused by different environment. This layer of samples set B is thinner because of Si OH bonds that may inhibit formation of this layer. Absorption IR spectra of set A show more ordered SiO x layer in comparison with samples of set B. The structural properties of HfO 2 are crucial for application in the future.
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