Abstract

Chemical mechanical polishing (CMP) is widely used in the surface planarization process of semiconductor fabrication. The planarization process produces a large amount of surface residue that must be removed before the next process is initiated. Typically, a combination of roll-and pen-type polyvinyl acetal (PVA) brushes is used for removing such contaminants. In the subsequent 450-mm wafer processing step, PVA brush cleaning is a viable candidate for post-CMP cleaning. However, given that the mechanisms of nanoscale particle cleaning are still under investigation [1-, the designs and operating conditions for brush cleaning are determined by trial and error. In this study, as a first step toward understanding the cleaning mechanisms, the tribological contact condition of the PVA roll brush (i.e., hydrodynamic, mixed, or boundary lubrication) is considered by measuring the frictional coefficients. In particular, the effects of rotation speed, compression distance, brush length, and fluid viscosity on the friction force are investigated.

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