Abstract
An investigation of the AC conductivity and dielectric relaxation of Bi-modified amorphous germanium selenide semiconductors (Ge Se 3.5) 100− x Bi x in the frequency range 100 Hz–10 KHz and in the temperature span 180 K–440 K has been undertaken for the first time. The AC conductivity is found to be proportional to ω s . The temperature dependence of σ AC( ω) and the parameter s in all the compositions is reasonably interpreted by the correlated barrier hopping model (CBH). The analyis of the results reveals that the electronic conduction in x = 0, 2, 4 compositions takes place via bipolaron hopping. Addition of Bi in higher concentration ( x = 10) induces a new type of microscopic environment and new defects which take part in the single polaron hopping conduction process.
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