Abstract
The free defect production efficiency, which is the number of freely migrating defects divided by the total displacements, has been estimated for a Fe-16Cr-45Ni alloy during 4 MeV Cu ion irradiation as a relative value to that of 1 MeV electron irradiation by application of loop growth measurements. The bulk loop growth model was verified by examining dependence of the loop growth rate on temperature and damage rate during electron and ion irradiations. The relative efficiency derived by sequential electron and ion irradiations was close to that derived by radiation-induced segregation and radiation-enhanced diffusion.
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