Abstract
A new technology, hetero-micromachining, is introduced. Hetero-micromachining is simulated and performed with InP heteroepitaxially grown on silicon substrates exploiting the etching selectivity between layer and substrate. The simulation is compared with the experimental results. The mechanical properties of micromachined epitaxial InP cantilevers are investigated using a static deflection method. We find a characteristic fracture limit of 910 MPa which is close to the results obtained with micromachined silicon structures.
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