Fractal Germanium Patterns: Annealing Strategies and Perspectives of Metal-Induced Crystallization

Abstract

Semiconductor germanium (Ge) in contact with some metals, such as Al, Pd, and Au, etc., is a class of distinctive materials with non-integer dimensions (D) that differ from integer dimensional materials, such as nanoparticles (0D), nanowires/nanorods//nanotubes/nanoribbons (1D), and thin films (2D). In this article, we describe our efforts toward understanding the annealing strategies and perspectives of metal-induced crystallization for the amorphous Ge embedded in Al, Pd, and Au matrices prepared by high vacuum thermal evaporation techniques, highlighting contributions from our laboratory. First, we present the Al-induced crystallization of amorphous Ge and formation processes of fractal Ge patterns. In addition, the fractal Ge patterns induced by Pd nanoparticles with solid-state reactions will be summarized in detail. Temperature-dependent properties of resistance and fractal dimension in Pd/Ge bilayer films will be expounded. In particular, the nonlinear optical properties are discussed in detail. Finally, we will emphasize the in situ observations by transmission electron microscopy and multi-fractal analysis for the fractal Ge patterns induced by Au nanoparticles. Moreover, the polycondensation-type fractal Ge patterns with non-integer dimensions, thick branches and smooth edges, and metastable gamma-Au0.6Ge0.4 are further investigated. The computer simulation indicated that the experimental results are good agreement with the simulation patterns, which were carried out by a ripening mechanism of non uniform grains. This review may provide a novel insight to modulate their competent performance and promote rational design of micro/nanodevices.