Abstract
A four-state magnetic random access memory (MRAM) was developed using an epitaxial Co50Fe50-MgO-Co50Fe 50 magnetic tunnel junction (MTJ) with a tunnel magnetoresistance (TMR) ratio of 145% at room temperature (RT). Four remanent magnetization states in the single-crystalline Co50Fe50 electrode, due to the cubic anisotropy with easy axes of the lang110rang directions, result in four possible angular-dependent TMRs, each separated by more than 20% at RT. Analysis of the asteroid curve for Co50Fe50 indicated that the magnetic field along 22.5deg from the lang110rang directions made it possible to change the magnetization direction of the selected cell without disturbing those of the half-selected cells
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
