Abstract
Zinc-blende MnSZnSe heterostructures on GaAs(100) have been characterized by X-ray photoelectron spectroscopy (XPS), optical methods, and transmission electron microscopy (TEM). XPS spectra indicated that the MnSZnSe interface is sharp and that the layers are of proper stoichiometry. TEM revealed isolated {111} stacking faults but confirmed the overall high crystalline quality and coherence of the MnSZnSe interface. XPS suggests a small valence band discontinuity (ΔEv) of about 140 meV with a type IIA alignment. This result was supported by low-temperature photoluminescence (PL) measurements on a MnsZnSe superlattice. No peaks were observed above the ZnSe band gap suggesting that the alignment was not type I. A previously unobserved broad PL peak was seen at about 2.77–2.78 eV, approximately 50 meV below the ZnSe bandgap.
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